2N5886 Solid State Transistors
Online Anfrage
- Menge
- 103
- Hersteller
- Solid State Transistors
- Datecode
- Beschreibung
- VPE = package quantity: 7 pcs, TO-3 package,
Technische Spezifikation 2N5886
| Polarity |
NPN, N-Channel |
| Breakdown Voltage [Collector to Emitter] |
80.0 V |
| Power Dissipation |
200 W |
| RoHS |
Compliant |
| Case/Package |
TO-3 |
| Number of Pins |
2 |
Ihre Hotline für ein Angebot:
Tel. 0721 15108-0
Weitere Bauteile
| Bezeichnung |
Hersteller |
Datecode |
Beschreibung |
| 2N5461 |
|
|
Transistor P-FET 40 V IDSS> 2 mA TO92 |
| 2N5494 |
|
|
Transistor npn 60 V 6.5 A 50 W TO220 |
| 2N5551 |
|
|
Transistor npn 180 V 600 mA 600 mW TO92 |
| 2N5680 |
|
|
Transistor pnp 120 V 1.0 A 1.0 W TO39 |
| 2N5878 |
|
|
Transistor npn 80 V 10 A 150 W TO3 |
| 2N6050 |
|
|
Transistor pnp 60 V 12 A 150 W TO3 |
| 2N6051 |
|
|
Transistor pnp 80 V 12 A 150 W TO3 |
| 2N6053 |
|
|
Transistor pnp 60 V 8.0 A 100 W TO3 |
| 2N6054 |
|
|
Transistor pnp 80 V 8.0 A 100 W TO3 |
| 2N6056 |
|
|
Transistor npn 80 V 8.0 A 100 W TO3 |
