IRF820 STM

Online Anfrage

IRF820 STM
Menge
3
Hersteller
STM
Datecode
Beschreibung
TO220AB, for domestic sale only
IRF820 STM
Menge
23
Hersteller
STM
Datecode
Beschreibung
MOS-FET

Technische Spezifikation IRF820

Polarity N-Channel
Voltage Rating (DC) 500 V
Continuous Drain Current (Ids) 2.50 A
Breakdown Voltage (Drain to Source) 500 V (min)
Drain to Source Voltage (Vds) 500 V
Current Rating 2.50 A
Lead-Free Status Contains Lead
Mounting Style Through Hole
Rise Time 8.60 ns
Drain to Source Resistance (on) (Rds) 3.00 Ω (max)
RoHS Non-Compliant
Power Dissipation 50.0 W

Andere Hersteller für IRF820

NoName HARRIS ST IR

Ihre Hotline für ein Angebot: Tel. 0721 15108-0

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