SI4425DY-T1 SIX
Online Anfrage
SI4425DY-T1
- Qty
- 2500
- Manufacturer
- SIX
- Datecode
- 2002
- Description
- P-CHANEL SO8-GEHÄUSE MOSFET
Technical Specification SI4425DY-T1
| Polarity | P-Channel |
| Breakdown Voltage [Gate to Source] | -20.0 V to 20.0 V |
| RoHS | Non-Compliant |
| Case/Package | SO |
| Drain to Source Resistance (on) (Rds) | 23.0 mΩ |
| Power Dissipation | 1.50 W |
Please contact us for a quotation: Tel. 0721 15108-0
Weitere Bauteile
| Part | Manufacturer | Datecode | Description |
|---|---|---|---|
| SI4,0T19195-I1 | WIC | 2002 | FEINSI.19195 4.0T 5x20 I1 |
| SI4,0T19372 | WIC | 2002 | SI.19372 4.0T TR5-T GEG C1 |
| SI4,0T19372K | WIC | 2002 | SI.19372K 4,0T TR5-T RM5.08 |
| SI4410DY | GS | 2002 | |
| SI4410DY-T1-REVA | SIX | 2002 | N-CHANNEL 30V 0,0135R |
| SI4539ADY-T1 | SIX | 2002 | 30V N/P-CHANEL MOSFET |
| SI4539DY-T1-OUT | OUT2 | 2002 | V/SIL SO8-MOSFET 30V 2W N/P-CH |
| SI5,0T19181 | WIC | 2002 | FEINSI.19181 5.0T 5x20 FS |
| SI5,0T19195 | WIC | 2002 | FEINSI.19195 5,0T 5x20 FS |
| SI5,0T19195-I1 | WIC | 2002 | FEINSI.19195 5,0T 5x20 I1 |