IRF150
Online Anfrage
IRF150
- Menge
- 3
- Hersteller
- Datecode
- Beschreibung
- Transistor N-MOSFET 100 V 30 A 150 W TO3
IRF150
- Menge
- 10
- Hersteller
- Datecode
- Beschreibung
Technische Spezifikation IRF150
| Polarity | N-Channel |
| Breakdown Voltage [Gate to Source] | -20.0 V to 20.0 V |
| Part Family | IRF150 |
| Power Dissipation | 150 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Drain to Source Resistance (on) (Rds) | 55.0 mΩ |
| Lifecycle Status | |
| RoHS | Non-Compliant |
| Number of Pins | 2 |
| Continuous Drain Current (Ids) | 38.0 A |
Ihre Hotline für ein Angebot: Tel. 0721 15108-0
Weitere Bauteile
| Bezeichnung | Hersteller | Datecode | Beschreibung |
|---|---|---|---|
| INA128PA | Amplifier INSTRUMENTAT. DIP08 | ||
| IR2112.IR | IR | IR2112 DIP14 | |
| IRC540 | Transistor | ||
| IRE5 | Fototransistor Infrared 30 V 100m W | ||
| IRF-PC50 | TRANS.MOSFET N 600V 11A TO247 | ||
| IRF3205 | Transistor | ||
| IRF3710 | Transistor | ||
| IRF4905 | Transistor | ||
| IRF510 | Transistor N-MOSFET 100 V 5.6 A 43 W TO220 | ||
| IRF513 | Transistor |