IRF830
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IRF830
- Ilość
- 32
- Producent
- Data produkcji
- Opis
- Transistor N-MOSFET 500 V 4.5 A 75 W TO220
IRF830
- Ilość
- 103
- Producent
- Data produkcji
- Opis
- N-FET
IRF830
- Ilość
- 4
- Producent
- Data produkcji
- Opis
Technical Specification IRF830
| Polarity | N-Channel |
| Input Capacitance | 610 pF |
| Voltage Rating (DC) | 500 V |
| Breakdown Voltage [Gate to Source] | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 4.50 A |
| Gate Charge | 38.0 nC |
| Breakdown Voltage (Drain to Source) | 500 V (min) |
| Drain to Source Voltage (Vds) | 500 V |
| Current Rating | 4.50 A |
| Lead-Free Status | Contains Lead |
| Mounting Style | Through Hole |
| Packaging | Tube |
| Rise Time | 16.0 ns |
| Drain to Source Resistance (on) (Rds) | 1.50 Ω |
| RoHS | Non-Compliant |
| Power Dissipation | 74.0 W |
Hotline dla zainteresowanych daną ofertą
Tel.:
Tel. 0721 15108-0
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