IRFBE30
Online Anfrage
IRFBE30
- Ilość
- 8
- Producent
- Data produkcji
- Opis
- Transistor
IRFBE30
- Ilość
- 10
- Producent
- Data produkcji
- Opis
Technical Specification IRFBE30
| Polarity | N-Channel |
| Voltage Rating (DC) | 800 V |
| Breakdown Voltage [Gate to Source] | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 4.10 A |
| Breakdown Voltage (Drain to Source) | 800 V |
| Current Rating | 4.10 A |
| Lead-Free Status | Contains Lead |
| Packaging | Bulk |
| Drain to Source Resistance (on) (Rds) | 3.00 Ω |
| Lifecycle Status | |
| RoHS | Non-Compliant |
| Power Dissipation | 125 W |
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