STP3NB80
Online Anfrage
STP3NB80
- Qty
- 9
- Manufacturer
- Datecode
- Description
- Transistor
Technical Specification STP3NB80
| Polarity | N-Channel |
| Breakdown Voltage [Gate to Source] | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 2.60 A |
| RoHS | Compliant |
| Breakdown Voltage (Drain to Source) | 800 V |
| Packaging | Tube |
| Drain to Source Resistance (on) (Rds) | 4.60 Ω |
| Lifecycle Status | |
| Power Dissipation | 90.0 W |
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