IRF840
Online Anfrage
IRF840
- Quantité
- 2
- Fabricant
- Date de fabrication
- Description
- Transistor N-MOSFET 500 V 8.0 A 125 W TO220
IRF840
- Quantité
- 66
- Fabricant
- Date de fabrication
- Description
IRF840
- Quantité
- 29
- Fabricant
- Date de fabrication
- Description
IRF840
- Quantité
- 3
- Fabricant
- Date de fabrication
- Description
Technical Specification IRF840
| Polarity | N-Channel |
| Voltage Rating (DC) | 500 V |
| Breakdown Voltage [Gate to Source] | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 8.00 A |
| Breakdown Voltage (Drain to Source) | 500 V (min) |
| Drain to Source Voltage (Vds) | 500 V |
| Current Rating | 8.00 A |
| Lead-Free Status | Contains Lead |
| Mounting Style | Through Hole |
| Packaging | Tube |
| Rise Time | 23.0 ns |
| Drain to Source Resistance (on) (Rds) | 850 mΩ |
| RoHS | Compliant |
| Power Dissipation | 125 W |
Votre hotline pour une offre :
Tel.:
Tel. 0721 15108-0
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