IRF9540

Online Anfrage

IRF9540
Quantité
470
Fabricant
Date de fabrication
Description
Transistor P-MOSFET 100 V 19 A 125 W TO220
IRF9540
Quantité
22
Fabricant
Date de fabrication
Description

Technical Specification IRF9540

Polarity P-Channel
Voltage Rating (DC) -100 V
Breakdown Voltage [Gate to Source] -20.0 V to 20.0 V
Continuous Drain Current (Ids) -19.0 A
Lead-Free Status Contains Lead
Drain to Source Voltage (Vds) -100 V
Current Rating -19.0 A
Rise Time 73.0 ns
Mounting Style Through Hole
Packaging Tube
Drain to Source Resistance (on) (Rds) 200 mΩ
RoHS Non-Compliant
Power Dissipation 150 W

Other Manufacturers for IRF9540

Samsung IR

Votre hotline pour une offre :
Tel.: Tel. 0721 15108-0

Weitere Bauteile

Désignation Fabricant Date de fabrication Description
IRF9510 Transistor P-MOSFET 100 V 3.0 A 20 W TO220
IRF9520 Transistor P-MOSFET 100 V 6.0 A 40 W TO220
IRF9520 Harris IRF840 TO220
IRF9530 Transistor P-MOSFET 100 V 12 A 75 W TO220
IRF9530N Transistor
IRF9540N Transistor
IRF9620 Transistor P-MOSFET 200 V 3.5 A 40 W TO220
IRF9630 Transistor P-MOSFET 200 V 6.5 A 75 W TO220
IRF9640 Transistor P-MOSFET 200 V 11 A 125 W TO220
IRFBC30 Transistor