IRFD110
Online Anfrage
IRFD110
- Quantité
- 58
- Fabricant
- Date de fabrication
- Description
- Transistor N-MOSFET 100 V 1.0 A 1.3 W DIP4
IRFD110
- Quantité
- 10
- Fabricant
- Date de fabrication
- Description
Technical Specification IRFD110
| Polarity | N-Channel |
| Voltage Rating (DC) | 100 V |
| Breakdown Voltage [Gate to Source] | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 1.00 A |
| Lead-Free Status | Contains Lead |
| Drain to Source Voltage (Vds) | 100 V |
| Current Rating | 1.00 A |
| Rise Time | 16.0 ns |
| Mounting Style | Through Hole |
| Packaging | Tube |
| Case/Package | DIP |
| Drain to Source Resistance (on) (Rds) | 540 mΩ |
| RoHS | Non-Compliant |
| Number of Pins | 4 |
| Power Dissipation | 1.30 W |
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