IRF530N

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IRF530N
Quantité
42
Fabricant
Date de fabrication
Description
Transistor
IRF530N
Quantité
29
Fabricant
Date de fabrication
Description

Technical Specification IRF530N

Polarity N-Channel
Voltage Rating (DC) 100 V
Breakdown Voltage [Gate to Source] -20.0 V to 20.0 V
Part Family IRF530N
Breakdown Voltage (Drain to Source) 100 V (min)
Drain to Source Voltage (Vds) 100 V
Current Rating 17.0 A
Lead-Free Status Contains Lead
Mounting Style Through Hole
Packaging Tube
Rise Time 22.0 ns
Drain to Source Resistance (on) (Rds) 90.0 mΩ
Lifecycle Status Active
RoHS Non-Compliant
Power Dissipation 70.0 W
Continuous Drain Current (Ids) 17.0 A

Other Manufacturers for IRF530N

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