IRF530N
Online Anfrage
IRF530N
- Quantité
- 42
- Fabricant
- Date de fabrication
- Description
- Transistor
IRF530N
- Quantité
- 29
- Fabricant
- Date de fabrication
- Description
Technical Specification IRF530N
| Polarity | N-Channel |
| Voltage Rating (DC) | 100 V |
| Breakdown Voltage [Gate to Source] | -20.0 V to 20.0 V |
| Part Family | IRF530N |
| Breakdown Voltage (Drain to Source) | 100 V (min) |
| Drain to Source Voltage (Vds) | 100 V |
| Current Rating | 17.0 A |
| Lead-Free Status | Contains Lead |
| Mounting Style | Through Hole |
| Packaging | Tube |
| Rise Time | 22.0 ns |
| Drain to Source Resistance (on) (Rds) | 90.0 mΩ |
| Lifecycle Status | Active |
| RoHS | Non-Compliant |
| Power Dissipation | 70.0 W |
| Continuous Drain Current (Ids) | 17.0 A |
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