IRFD9120 IR

Online Anfrage

IRFD9120 IR
Quantité
30
Fabricant
IR
Date de fabrication
15
Description
IRFD9120 IR
Quantité
359
Fabricant
IR
Date de fabrication
Description
DIP-4/MOS-VORSCHRIFT
IRFD9120 IR
Quantité
359
Fabricant
IR
Date de fabrication
Description
VPE = package quantity: 100 pcs, DIP-4 package,

Technical Specification IRFD9120

Polarity P-Channel
RoHS Non-Compliant
Drain to Source Voltage (Vds) -100 V
Number of Pins 4
Continuous Drain Current (Ids) -1.00 A

Other Manufacturers for IRFD9120

NoName MBR MOT HAR

Votre hotline pour une offre :
Tel.: Tel. 0721 15108-0

Weitere Bauteile

Désignation Fabricant Date de fabrication Description
IRFBC40 Transistor
IRFBE30 Transistor
IRFD110 Transistor N-MOSFET 100 V 1.0 A 1.3 W DIP4
IRFD120 Transistor N-MOSFET 100 V 1.3 A 1.3 W DIP4
IRFD220 Transistor N-MOSFET 200 V 1.3 A 1.3 W DIP4
IRFP044N Transistor
IRFP064N Transistor
IRFP140N Transistor
IRFP150 Transistor N-MOSFET 100 V 40 A 180 W TO247
IRFP150N Transistor N-MOSFET 100 V 42 A 160 W TO247A