VQ1001P SIX

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VQ1001P SIX
Quantità
25
Produttore
SIX
Codice data
Descrizione
TO-116/N/MOS-VORSCHRIFT

Technical Specification VQ1001P

Polarity N-Channel
Breakdown Voltage [Gate to Source] -30.0 V to 30.0 V
Continuous Drain Current (Ids) 3.00 A
Power Dissipation 1.30 W
Breakdown Voltage (Drain to Source) 30.0 V
Mounting Style Through Hole
Case/Package DIP
Drain to Source Resistance (on) (Rds) 1.00 Ω
RoHS Non-Compliant
Number of Pins 14

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